作者: A. Opanowicz , P. Pietrucha
DOI: 10.1063/1.1530713
关键词: Analytical chemistry 、 Trapping 、 Luminescence 、 Carrier lifetime 、 Electron density 、 Chemistry 、 Relative density 、 Free electron model 、 Conductivity 、 Thermoluminescence
摘要: A method for determining the ratio of recombination and trapping coefficients relative density inactive deep traps on basis simultaneously measured thermally stimulated conductivity (TSC) luminescence (TSL) is derived in case a temperature-dependent free electron lifetime. The based relation between preexponential factor temperature dependence occupancy active traps. Values trap depth corresponding to different values TSC intensity can be found from peak at heating rates sample. Similar analysis TSL produces accurate as well. determination also yields results multipeak curves. These are more than those using heating-rate Haering Adams [Phys. Rev. 117, 451 (196...