Field effect transistors and materials and methods for their manufacture
作者： Stephen George Yeates , Janos Veres , John David Schofield , Beverley Anne Brown , Stephen William Leeming
DOI:
关键词: Composite material 、 Permittivity 、 Conductivity 、 Layer (electronics) 、 Materials science 、 Organic semiconductor 、 Semiconductor 、 Coating 、 Field-effect transistor 、 Substrate (printing)
摘要: A field effect transistor in which a continuous semiconductor layer comprises: a) an organic semiconductor; and, b) binder has inherent conductivity of less than 10-6Scm-1 and permittivity at 1,000 Hz 3.3 process for its production comprising: coating substrate with liquid comprises the material capable reacting to form binder, converting solid comprising by binder.
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