INSULATING FILM AND PASSIVATION FILM DEPOSITING METHOD OF SEMICONDUCTOR DEVICE
作者： Ku Jon-Hoi , Yu Hyung-Kun
DOI:
关键词: Materials science 、 Passivation 、 Oxide 、 Hillock 、 Metal 、 Angstrom 、 Optoelectronics 、 Semiconductor device 、 Chemical vapor deposition
摘要: The method includes the steps of depositing a pure oxide film 1300 angstrom thickness on metal wiring within 5 minutes by an APCVD process and sequentially PSG (phospho-silicate glass) 9200 1500 thereon LPCVD process, thereby forming insulating or passivation wirings to pervent hillocks from being generated.
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