作者: R. Castello , D.D. Caviglia , M. Franciotta , F. Montecchi
DOI: 10.1049/EL:19911161
关键词: Memory cell 、 Capacitor 、 Computer science 、 Signal 、 Very-large-scale integration 、 Topology 、 Electronic engineering 、 Variable (computer science) 、 Artificial neural network 、 CMOS
摘要: An analogue memory cell based on a local selfrefreshing technique is presented. The circuit suitable for long-term storage of synaptic weights in VLSI implementations neural networks. refreshes the voltage capacitor multilevel fashion by automatic comparison and confirmation with range discrete levels locally reproduced from an external reference signal.