Alloying behavior of Ni/Au‐Ge films on GaAs
作者： Masaki Ogawa
DOI: 10.1063/1.327387
关键词: Auger electron spectroscopy 、 Fabrication 、 Analytical chemistry 、 Diffractometer 、 Atmospheric temperature range 、 Crystallography 、 Auger 、 Spectrometer 、 Annealing (metallurgy) 、 Materials science 、 Microprobe
摘要: Alloying behavior of thin Ni/Au‐Ge films deposited on a GaAs substrate is investigated by using microprobe Auger spectrometer and an x‐ray diffractometer. The react with the above 300 °C to form alloys complex multilayer structure in 300–400 °C temperature range microscopic grain 450 °C. Uniform alloying, accompanied smooth interface, observed ascribed high reactivity Ni under solid‐solid phase. However, when sample annealed phase, penetrates irregularly into substrate, if annealing duration too long, causing poor Ohmicity. Rapid Ge moving interface at 400 °C closely related formation Ge‐doped degenerate layer beneath contact. reliability contract, which obtained 500 °C, explained metallurgical stability structure. Based results this study, some rules for III‐V compound semiconductor contact fabrication are proposed.
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