Current drag in semiconductor devices

摘要: Abstract Electrical currents in semiconductor devices are often carried simultaneously by both electrons and holes. The electron hole have traditionally been treated as independent, except for recombination phenomena. Simple thermodynamic arguments indicate the possibility that electrical current of one species may exert a dragging effect upon other, through their mutual Coulomb interaction. coupling between components we called drag. We calculate this strength, show its influence on operation pn diode an example.