Hard x-ray emission spectroscopy: a powerful tool for the characterization of magnetic semiconductors
作者： M Rovezzi , P Glatzel
DOI: 10.1088/0268-1242/29/2/023002
关键词: Scattering 、 Atomic physics 、 Materials science 、 Electronic structure 、 Condensed matter physics 、 Magnetic semiconductor 、 Synchrotron radiation 、 Spin (physics) 、 Emission spectrum 、 Magnetic circular dichroism 、 Exchange interaction
摘要: This review aims to introduce the x-ray emission spectroscopy (XES) and resonant inelastic scattering (RIXS) techniques materials scientist working with magnetic semiconductors (e.g. doped 3d transition metals) for applications in field of spin-electronics. We focus our attention on hard part spectrum (above 3 keV) order demonstrate a powerful element- orbital-selective characterization tool study bulk electronic structure. XES RIXS are photon-in/photon-out second optical processes described by Kramers-Heisenberg formula. Nowadays, availability third generation synchrotron radiation sources permits applying such also dilute materials, opening way detailed atomic impurity-driven materials. present K{\beta} as occupied valence states (directly, via valence-to-core transitions) probe local spin angular momentum (indirectly, intra-atomic exchange interaction). The sensitivity is employed, turn, spin-polarized unoccupied states. Finally, combination circular dichroism (RIXS-MCD) extends possibilities standard tools.
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