Synthesis, Properties, and Applications of One-Dimensional Transition Metal Silicide Nanostructures

摘要: One-dimensional (1D) nanostructures of transition metal silicide (TMS) have attracted more attention due to their unique properties and potential applications in microelectronics. A variety synthetic approaches were developed fabricate 1D TMS nanostructures. Chemical vapor deposition (CVD) is the most widely used method synthesize Various precursors growth mechanisms are involved CVD processes. Other methods such as chemical transport (CVT) method, silicidation reactive epitaxial hydrothermal also successfully employed for formation Electrical measurements reveal that many nanowires exhibit metallic behavior with extremely high conductivity. At same time, semiconducting behaviors observed some situations. Some (silicides Fe, Co, Ni, Cr, Mn, etc.) ferromagnetic properties, even at room temperature. Unique field-emission, optical, thermoelectric, mechanical investigated Based on these utilized microelectronic devices, lithium ion batteries, memory device capacitor, etc.