Effect of electron-hole pairs on phonon frequencies in Si related to temperature dependence of band gaps
作者： V. Heine , J. A. Van Vechten
关键词: Direct and indirect band gaps 、 Covalent bond 、 Valence (chemistry) 、 Band gap 、 Carrier generation and recombination 、 Phonon 、 Materials science 、 Semiconductor 、 Condensed matter physics 、 Lattice vibration
摘要: The direct and indirect gaps between valence and conduction bands in semiconductors usually decrease with temperature. This effect is related by thermodynamic identities to the influence of electron-hole pairs on the lattice vibration frequencies. We show that the surprisingly large magnitude of the effect in Si and similar semiconductors is related to the sensitivity of the transverse-acoustic modes to covalent bonding. We are able to account for the magnitude of the effect from zero to the melting temperature. We also account for …
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