作者: Carl Morandi , Jennifer L. Gray , Wes Auker , Susan Trolier-McKinstry
DOI: 10.1109/TUFFC.2018.2824979
关键词: Pulsed laser 、 Ferroelectricity 、 Analytical chemistry 、 Microstructure 、 Polarization (waves) 、 Thin film 、 Pulsed laser deposition 、 Materials science 、 Non-volatile memory 、 Pyrochlore
摘要: 35 Bi(Mg1/2Ti1/2)O3 - 65 PbTiO3 (35 BiMT-65 PT) is a potential candidate material for high-temperature nonvolatile ferroelectric memory. For pulsed-laser deposited PT films with the perovskite structure, it was found that as chamber pressure during deposition decreased, Mg and Pb contents in as-deposited drop, while concentration of Bi increases. Concurrently change composition, remanent polarization $P_{r}$ increases 64% to $\approx 21~\mu \text{C}$ /cm2 polarization–electric field loops rotated counterclockwise Decreasing seed layer thickness from 36 16 nm led decrease 14~\mu /cm2. Adjusting target composition allowed which had near-stoichiometric concentrations, but all cases, grown were lead deficient. These polarizations 18– $20~\mu If content increased too far, possibly due need evolve more PbO defective growth layers. Finally, rate showed no substantial effect on film did have significant impact properties. As 22~\mu enhanced crystalline quality. At laser frequencies 5 Hz, Mg-rich pyrochlore phase begins form maximum $P_{r} \approx The processing-composition behavior explained via preferential adsorption A-site, results vacancies.