Apparatus for growing metal oxides using organometallic vapor phase epitaxy
作者： Eric Jeffrey Smith , Boo J. L. Nilsson , Steven P. Denbaars
DOI:
关键词: Molecule 、 Reaction chamber 、 Metal oxide thin films 、 Epitaxy 、 Metal 、 Materials science 、 High temperature superconducting 、 Vapor phase 、 Thin film 、 Analytical chemistry
摘要: The methods and apparatus disclosed enable controlled growth of multicomponent metal oxide thin films, including high temperature superconducting (HTS) which are uniform reproducible. method a flow pressure gaseous phase containing molecules to be introduced into reaction chamber, or an analysis both. the chamber enables deposition oxides on substrate and, therefore, HTS substrate. compositional gas. also allows adjustment based upon results analysis. In one aspect this invention, heating mantle provides substantially throughout apparatus.
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