Nitride LEDs based on quantum wells and quantum dots
作者： J. Verma , A. Verma , V. Protasenko , S.M. Islam , D. Jena
DOI: 10.1533/9780857099303.2.368
关键词: Band gap 、 Quantum dot 、 Quantum well 、 Diode 、 Heterojunction 、 Materials science 、 Light-emitting diode 、 Optoelectronics 、 Electro-absorption modulator 、 Nanowire
摘要: Abstract: Tremendous progress has been made in the field of III-nitride light-emitting diodes from Schottky to p-n junctions heterostructures and structures based on quantum wells dots. The built-in polarization-induced electric along {0001} reduces oscillator strength well structures. However, this used improve p-type doping AlGaN alloys. InGaN-based high-efficiency blue LEDs have developed efforts are under way fill green gap visible light emission LEDs. On other hand, wide bandgap III-nitrides being for ultraviolet Novel incorporating nanowires photonic crystals also investigated.
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