Control of SiC-based dual active bridge in high power three phase on-board charger of EVs

作者: Sandra Zeljkovic , Radovan Vuletic , Andreas Miller , Alann Denais

DOI: 10.1109/ESARS.2015.7101454

关键词: Three-phaseBattery (vacuum tube)Wide-bandgap semiconductorElectrical engineeringHigh voltageTraction (orthopedics)Power (physics)EngineeringInterface (computing)Electronic engineeringGrid

摘要: This paper presents a control algorithm of active power flow between traction battery and grid in dual bridge converter (DAB). Here, DAB is part three phase 10kW bidirectional on-board charger electric vehicles (EVs). It an isolated interface to the placed after factor correction (PFC) stage. 1200V rated SiC JFETs H-bridge at DC link side enable operation high voltage values (above 500V) with switching frequencies range from 50 150 kHz. Both efficiency simplified, compact design can be achieved thanks application these wide band gap (WBG) devices. Furthermore, presented achieve fast reference tracking even case when, due simplicity sensing, only average currents both are being regulated.

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