作者: Richard Francis Schmerda , Michael Anthony Damiano
DOI:
关键词: Overvoltage 、 Logic level 、 Voltage divider 、 Voltage 、 MOSFET 、 Flyback transformer 、 Electrical engineering 、 Diode 、 Engineering 、 Power MOSFET
摘要: A power MOSFET reversing H-drive system having a first pair of N-channel and P-channel MOSFETs (Q1, Q2) connected in series with load (LD1, LD2) to supply source (T 1) second like (Q3, Q4) the (T1), each resistance voltage divider (R1-R2, R5-R6) for providing Q3) different level gate signal from logic input by which (Q2, is gated, an overvoltage protector (Z1, Z2) allowing extension (T1) range under operable, on-state resistances flyback current capability intrinsic diodes (ID1, ID4) being matched size be driven.