Generation of positive charge in silicon dioxide during avalanche and tunnel electron injection

摘要: Avalanche and Fowler–Nordheim tunneling electron injections have been performed at constant current on a broad variety of differently processed Al‐gate metal‐oxide‐semiconductor capacitors. It is found that the same type positive charge (the ‘‘slow states’’) generated during low‐field high‐field injection. The maximum amount which can be given electric field depends processing increases linearly with average in oxide. However, rate controlled uniquely by anode field, for polarity gate voltage. follows role traps bulk SiO2—independent their nature—is increasing both total number created defects enhancing, respectively, as result distortion potential SiO2, must increased to maintain injected current. Processes described ear...