GeSn technology: Extending the Ge electronics roadmap
作者： Suyog Gupta , Robert Chen , Blanka Magyari-Kope , Hai Lin , Bin Yang
DOI: 10.1109/IEDM.2011.6131568
关键词: Materials science 、 Metastability 、 Optoelectronics 、 Electron mobility 、 Electronics 、 Thermal 、 Alloy 、 Band gap 、 Direct and indirect band gaps 、 MOSFET
摘要: First principles study showed indicated band gap of Ge can be tuned by alloying with Sn and metastable GeSn alloys synthesized at or above room temperature. Subsequently, high quality layers were grown using low temperature MBE. PL good crystal material a reduced direct bandgap. Challenges involved in CMOS processing on addressed through effective surface cleaning thermal budget process flow. To the best our knowledge this work is first demonstration high-κ pMOSFET 3% as channel showing 20% improvement hole mobility compared to Ge. Alloying has thus been shown performance booster for based devices. Further improvements incorporation higher substitutional Sn, coupled strain bandgap engineering, significant gains achieved from alloy system.
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