α,ω-Dihexylquaterthiophene: A Second Thin Film Single-Crystal Organic Semiconductor

摘要: The thin film structure and hole mobility of 5,5‘‘‘-dihexylquaterthiophene are reported. Films sublimed onto Si/SiO2 or carbon grids held at 30−100 °C single-crystal-like over tens micrometers as shown by electron diffraction. orientation has the long axis quaterthiophene core nearly perpendicular to substrate. ranges from 0.05 0.23 cm2/Vs, depending on deposition temperature, much higher than would be expected based earlier thiophene oligomer data.