Analyzing path delays for accelerated testing of logic chips

作者: Emily Ray , Barry Linder , Raphael Robertazzi , Kevin Stawiasz , Alan Weger

DOI: 10.1109/IRPS.2015.7112764

关键词: TransistorAccelerationDegradation (telecommunications)Electronic engineeringPath (graph theory)Test methodEngineeringVoltageStress (mechanics)Electronic circuit

摘要: We develop a test methodology utilizing the critical path delay to monitor and predict degradation of circuits during ramp voltage stress (RVS). Stress is applied by looping functional patterns RVS. Our results demonstrate that behavior circuit can be characterized analyzed with RVS in manner similar developed for single transistor. This alternative fast lends itself in-line testing reduced times small sample numbers.

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