作者: H.P. Schmid , G.S. Moschytz
关键词: Spurious-free dynamic range 、 Electronic engineering 、 RC circuit 、 CMOS 、 Amplifier 、 Operational amplifier 、 Total harmonic distortion 、 Engineering 、 Electrical engineering 、 Resistor 、 Low-pass filter
摘要: The authors show how continuous-time active-RC filters can be implemented in CMOS by replacing all resistors MOSFETs operating the linear region. As an example, a 24 MHz active MOSFET-C single-amplifier biquadratic lowpass filter with pole-Q of 3 0.6 /spl mu/m process is discussed. By comparing measurements test chip, simulations and calculations, following conclusion reached. long as specifications for frequency, pole-Q, spurious-free dynamic range supply voltage lie within certain limits, then active-MOSFET-C biquads (MOSFET-C SABs) are preferable; respect to chip size power consumption, compared multi-amplifier biquads, e.g. integrator-connected biquads. Above these latter must used.