Structural and electronic switching of a single crystal 2D metal-organic framework prepared by chemical vapor deposition.

摘要: The incorporation of metal-organic frameworks into advanced devices remains a desirable goal, but progress is hindered by difficulties in preparing large crystalline framework films with suitable electronic performance. We demonstrate the direct growth large-area, high quality, and phase pure single crystals through chemical vapor deposition dimolybdenum paddlewheel precursor, Mo2(INA)4. These exceptionally uniform, quality cover areas up to 8600 µm2 can be grown down thicknesses 30 nm. Moreover, scanning tunneling microscopy indicates that Mo2(INA)4 clusters assemble two-dimensional, single-layer framework. Devices are readily fabricated from vapor-phase exhibit reversible 8-fold changes conductivity upon illumination at modest powers. we identify vapor-induced crystal transitions responsible for 30-fold as monitored situ device measurements. Gas-phase methods, including deposition, show broader promise preparation high-quality molecular frameworks, may enable their integration devices, detectors actuators.