Defects in 700 keV oxygen ion irradiated ZnO
作者： S. Pal , A. Sarkar , S. Chattopadhyay , Mahuya Chakrabarti , D. Sanyal
DOI: 10.1016/J.NIMB.2013.06.009
关键词: Irradiation 、 Absorption spectroscopy 、 Crystal 、 Single crystal 、 Crystallographic defect 、 Absorption (electromagnetic radiation) 、 Analytical chemistry 、 Absorption band 、 Photoluminescence 、 Materials science 、 Optoelectronics
摘要: Abstract It is well known that energetic oxygen ions induce heavy crystalline disorder in ZnO, however, systematic study on this regard very much limited. Here, we present photoluminescence (PL), optical absorption and sheet resistance measurements poly single ZnO samples irradiated with 700 keV O ions. Results have been compared the effects of 1.2 MeV Ar irradiation similar target. Colour change increasing fluence has also noted. Non-monotonic variation room temperature increase observed for polycrystalline ZnO. Such an outcome understood as point defects transforming to bigger size clusters. Near band edge (NBE) PL emission largely reduced due ion irradiation. However, at 10 K NBE can be samples. Irradiated crystal does not show any transition even 10 K. evident dynamic recovery more effective Ultraviolet–visible spectrum pronounced sub-band gap absorption. Oxygen generated new 3.05 eV. In light earlier reports, particular ascribed by neutral vacancy defects.
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