How important is the {103} plane of stable Ge2Sb2Te5 for phase‐change memory?
作者： W. ZHANG , W.T. ZHENG , J.-G. KIM , X.Q. CUI , L. LI
DOI: 10.1111/JMI.12242
关键词: Condensed matter physics 、 Crystallography 、 Shape-memory alloy 、 Phase-change memory 、 Hexagonal phase 、 Phase (matter) 、 Materials science 、 Metastability 、 Amorphous solid 、 Plane (geometry) 、 3D optical data storage
摘要: Summary Closely correlating with {200} plane of cubic phase, {103} hexagonal phase Ge2Sb2Te5 plays a crucial role in achieving fast change process as well formation modulation structures, dislocations and twins Ge2Sb2Te5. The behaviors render the phase-change memory nanoscale shape memory. Lay description Exploring mechanism, structures properties chalcogenides has been currently one hot topics. Ge-Sb-Te are tremendous technological importance ranging from optical data storage to PRAM. Exhibiting best performance for DVD–RAM terms speed stability, is most important alloy. There exist three solid phases Ge2Sb2Te5: amorphous, metastable rocksalt (FCC) stable (Hex) phases. whole switching operation electronic memories based on following rapid cycling processes by either laser or electric heating: amorphousFCC (Erase/SET process)Hexliquidamorphous (Write/RESET process). Hex an indispensable concern bridge aforementioned framework. In this work, structural correlations between two crystalline were analyzed rich phenomena unraveled. Closely correlated FCC We propose that point view maintaining ultra-high transition speed, (103) can effectively facilitate memory. This leads novel concept be treated shape-memory, towards essential understanding relevant features chalcogenides.
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