Growth and characterization of well-aligned densely-packed rutile TiO(2) nanocrystals on sapphire substrates via metal-organic chemical vapor deposition.

作者: C A Chen , Y M Chen , A Korotcov , Y S Huang , D S Tsai

DOI: 10.1088/0957-4484/19/7/075611

关键词: Selected area diffractionMaterials scienceSubstrate (electronics)Scanning electron microscopeRutileCrystallographyChemical vapor depositionMetalorganic vapour phase epitaxyTransmission electron microscopySapphire

摘要: Well-aligned densely-packed rutile TiO2 nanocrystals (NCs) have been grown on sapphire (SA) (100) and (012) substrates via metal–organic chemical vapor deposition (MOCVD), using titanium-tetraisopropoxide (TTIP, Ti(OC3H7)4) as a source reagent. The surface morphology well structural spectroscopic properties of the as-deposited NCs were characterized field-emission scanning electron microscopy (FESEM), transmission (TEM), selected-area diffractometry (SAED), x-ray diffraction (XRD) micro-Raman spectroscopy. FESEM micrographs reveal that vertically aligned SA(100), whereas SA(012) with tilt angle ~33° from normal to substrates. TEM SAED measurements showed SA(100) square cross section their long axis directed along [001] direction. XRD results either (002) orientation substrate or (101) substrate. A strong effect alignment growth has demonstrated probable mechanism for formation these discussed.

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