Effect of tunneling layers on the performances of floating-gate based organic thin-film transistor nonvolatile memories
作者： Wei Wang , Jinhua Han , Jun Ying , Lanyi Xiang , Wenfa Xie
DOI: 10.1063/1.4896665
关键词: Tunnel effect 、 Voltage 、 Materials science 、 Optoelectronics 、 Transistor 、 Electron mobility 、 Layer (electronics) 、 Thin-film transistor 、 Quantum tunnelling 、 Thin film
摘要: Two types of floating-gate based organic thin-film transistor nonvolatile memories (FG-OTFT-NVMs) were demonstrated, with poly(methyl methacrylate co glycidyl methacrylate) (P(MMA-GMA)) and tetratetracontane (TTC) as the tunneling layer, respectively. Their device performances measured compared. In memory a P(MMA-GMA) typical unipolar hole transport was obtained relatively small mobility 0.16 cm2/V s. The unidirectional shift turn-on voltage (Von) due to only holes trapped/detrapped in/from floating gate resulted in window 12.5 V at programming/erasing voltages (VP/VE) ±100 V nonzero reading voltage. Benefited from well-ordered molecule orientation trap-free surface TTC considerably high 1.7 cm2/V s visible feature electrons accumulated channel trapped achieved layer. High on current...
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sci-hub.se 参考文章(16)
Wei Wang, Dongge Ma, Organic floating-gate transistor memory based on the structure of pentacene/nanoparticle-Al/Al2O3 Applied Physics Letters. ,vol. 96, pp. 203304- ,(2010) , 10.1063/1.3432667
Th. B. Singh, N. Marjanović, G. J. Matt, N. S. Sariciftci, R. Schwödiauer, S. Bauer, Nonvolatile organic field-effect transistor memory element with a polymeric gate electret Applied Physics Letters. ,vol. 85, pp. 5409- 5411 ,(2004) , 10.1063/1.1828236
Toan Thanh Dao, Toshinori Matsushima, Hideyuki Murata, Organic nonvolatile memory transistors based on fullerene and an electron-trapping polymer Organic Electronics. ,vol. 13, pp. 2709- 2715 ,(2012) , 10.1016/J.ORGEL.2012.07.041
Andreas Opitz, Matthias Horlet, Marc Kiwull, Julia Wagner, Michael Kraus, Wolfgang Brütting, Bipolar charge transport in organic field-effect transistors: Enabling high mobilities and transport of photo-generated charge carriers by a molecular passivation layer Organic Electronics. ,vol. 13, pp. 1614- 1622 ,(2012) , 10.1016/J.ORGEL.2012.04.032
Wei Wang, Dongge Ma, Su Pan, Yudan Yang, Hysteresis mechanism in low-voltage and high mobility pentacene thin-film transistors with polyvinyl alcohol dielectric Applied Physics Letters. ,vol. 101, pp. 033303- ,(2012) , 10.1063/1.4737173
Yunlong Guo, Ji Zhang, Gui Yu, Jian Zheng, Lei Zhang, Yan Zhao, Yugeng Wen, Yunqi Liu, Lowering programmed voltage of organic memory transistors based on polymer gate electrets through heterojunction fabrication Organic Electronics. ,vol. 13, pp. 1969- 1974 ,(2012) , 10.1016/J.ORGEL.2012.05.007
Satoshi Ogawa, Yasuo Kimura, Michio Niwano, Hisao Ishii, Trap elimination and injection switching at organic field effect transistor by inserting an alkane (C44H90) layer Applied Physics Letters. ,vol. 90, pp. 033504- ,(2007) , 10.1063/1.2431713
Jinhua Han, Wei Wang, Jun Ying, Wenfa Xie, Ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory Applied Physics Letters. ,vol. 104, pp. 013302- ,(2014) , 10.1063/1.4860990
T. Sekitani, T. Yokota, U. Zschieschang, H. Klauk, S. Bauer, K. Takeuchi, M. Takamiya, T. Sakurai, T. Someya, Organic Nonvolatile Memory Transistors for Flexible Sensor Arrays Science. ,vol. 326, pp. 1516- 1519 ,(2009) , 10.1126/SCIENCE.1179963
Peter Frübing, Michael Wegener, Reimund Gerhard(-Multhaupt), A Buchsteiner, Werner Neumann, Ludwig Brehmer, Pyroelectric properties and dielectric hysteresis of a poly(vinyl alcohol) with azobenzene-alkoxy side chains Polymer. ,vol. 40, pp. 3413- 3420 ,(1999) , 10.1016/S0032-3861(98)00563-1