Long-range order in Al x Ga 1-x As
作者： T. S. Kuan , T. F. Kuech , W. I. Wang , E. L. Wilkie
DOI: 10.1103/PHYSREVLETT.54.201
关键词: Solid solution 、 Electron diffraction 、 Epitaxy 、 Order (ring theory) 、 Superstructure 、 Range (particle radiation) 、 Crystallography 、 Thin film 、 Inorganic compound 、 Materials science
摘要: We report the first observation of long-range order in a semiconductor III-V ternary alloy. ${\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}$ thin crystals grown by metal-organic chemical vapor deposition or molecular-beam epitaxy have Ga atoms preferentially occupying 0,0,0 and \textonehalf{},\textonehalf{},0 sites Al \textonehalf{},0,\textonehalf{} 0,\textonehalf{},\textonehalf{} each unit cell. Our results indicate that this ordered structure is equilibrium state ${\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}$.
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sci-hub.se 参考文章(4)
A. C. Gossard, P. M. Petroff, W. Weigmann, R. Dingle, A. Savage, Epitaxial structures with alternate‐atomic‐layer composition modulation Applied Physics Letters. ,vol. 29, pp. 323- 325 ,(1976) , 10.1063/1.89082
G.B Stringfellow, Calculation of ternary phase diagrams of III?V systems Journal of Physics and Chemistry of Solids. ,vol. 33, pp. 665- 677 ,(1972) , 10.1016/0022-3697(72)90075-3
J. C. Phillips, Partial dislocations, columnar growth, clustering, and pinhole formation in ultrathin film semiconductor heterostructures Journal of Vacuum Science and Technology. ,vol. 19, pp. 545- 550 ,(1981) , 10.1116/1.571123
P. M. Petroff, A. Y. Cho, F. K. Reinhart, A. C. Gossard, W. Wiegmann, Alloy Clustering in Ga 1-x Al x As Compound Semiconductors Grown by Molecular Beam Epitaxy Physical Review Letters. ,vol. 48, pp. 170- 173 ,(1982) , 10.1103/PHYSREVLETT.48.170