Effect of carrier loss through waveguide layer recombination on the internal quantum efficiency in large-optical-cavity laser diodes
作者： B. S. Ryvkin , E. A. Avrutin
DOI: 10.1063/1.1929087
关键词: Quantum dot laser 、 Waveguide (optics) 、 Materials science 、 Optoelectronics 、 Quantum efficiency 、 Semiconductor laser theory 、 Distributed feedback laser 、 Optics 、 Laser diode rate equations 、 Optical cavity 、 Semiconductor optical gain 、 General Physics and Astronomy
摘要: An analytical treatment for carrier distribution in optical confinement layers (OCLs) of semiconductor lasers with bimolecular recombination is developed. On the basis this approach, effect OCL on internal quantum efficiency a laser evaluated. It shown that can lead to rapid deterioration increased waveguide thickness at high enough currents, and also contributes decrease current given structure. asymmetric, narrow structure avoid problem while still providing good-quality beam.
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