Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation
作者： J M Ramírez , F Ferrarese Lupi , O Jambois , Y Berencén , D Navarro-Urrios
DOI: 10.1088/0957-4484/23/12/125203
关键词: Excitation 、 Nanoclusters 、 Doping 、 Silicon 、 Electroluminescence 、 Silicon oxide 、 Optoelectronics 、 Erbium 、 Excited state 、 Materials science
摘要: The electroluminescence (EL) at 1.54 m of metal‐oxide‐semiconductor (MOS) devices with Er 3C ions embedded in the silicon-rich silicon oxide (SRSO) layer has been investigated under different polarization conditions and compared that erbium doped SiO2 layers. EL time-resolved measurements allowed us to distinguish between two excitation mechanisms responsible for emission an alternate pulsed voltage signal (APV). Energy transfer from nanoclusters (Si-ncs) is clearly observed low-field APV excitation. We demonstrate sequential electron hole injection edges pulses creates excited states Si-ncs which upon recombination their energy ions. On contrary, direct impact by hot injected carriers starts Fowler‐Nordheim threshold (above 5 MV cm 1 ) dominates high-field (Some figures may appear colour only online journal)
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