Monte Carlo Evaluation of Tritium Beta Spectrum Energy Deposition in Gallium Nitride (GaN) Direct Energy Conversion Devices
作者： Marc Litz
DOI:
关键词: Silicon carbide 、 Monte Carlo method 、 Direct energy conversion 、 Gallium nitride 、 Direct and indirect band gaps 、 Materials science 、 Energy transformation 、 Semiconductor 、 Emission spectrum 、 Atomic physics
摘要: In this report, a Monte Carlo nuclear scattering code Monte Carlo n-particle extended MCNPX was used to investigate the possibility of using gallium nitride GaN semiconductors for the purpose of converting the low energy emitted during natural decay of tritium 3H into electrical current for use in a power source. The shape of the beta decay spectrum differs in isotopes because of screening potentials and forbidden transitions. Therefore the use of average energy or endpoint energy is not sufficient for a detailed understanding of energy …
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