Crystallization behavior of sputter-deposited amorphous Ge2Sb2Te5 thin films
作者： Tae H. Jeong , Myong R. Kim , Hun Seo , Sang J. Kim , Sang Y. Kim
DOI: 10.1063/1.370803
关键词: Differential scanning calorimetry 、 Materials science 、 Thin film 、 Ellipsometry 、 Diffraction 、 Crystallography 、 Transmission electron microscopy 、 Sputtering 、 Crystallization 、 Analytical chemistry 、 Amorphous solid
摘要: The crystallization behavior of amorphous Ge2Sb2Te5 thin films were investigated by using differential scanning calorimetry, x-ray diffraction, and optical reflectivity measurements. analysis in situ ellipsometry isotherm based on the Johnson–Mehl–Avrami equation revealed that process near 150 °C was a two-step process. In this alloy film, kinetic exponents about 4.4 for first stage 1.1 second stage. A model cascaded is proposed. proposed showed good agreement with experimental results obtained transmission electron microscopy diffraction.
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