Method for forming isolation layer of semiconductor device

摘要: A method for forming an isolation layer of a semiconductor device. The includes: a) sequentially laminating pad oxide and nitride on substrate; b) selectively removing the layer, substrate, thereby trench in c) implanting ions direction with tilted angle into side wall located upper trench; d) portion trench, which are implanted, to form sloped wherein is inclined inverse direction; e) filling HDP oxid surface entire structure including f) planarizing layer; g) remaining layer.