Charge carrier trapping centers in synthetic diamond

摘要: Abstract Investigations of electrically active defects in synthetic diamond have been performed with the use method currents thermally stimulated depolarization (TSD). It has shown that trapping centers most probable activation energy E = 1.7−2.0 eV (the cross section being S=10−13−10−15 cm−2) are quick recombination while E=3.3−3.6 and a S=10−8-10−10 cm−2 centres slow recombination. The photosensitivity increases center concentration.