The effect of nitridation on the optical properties of InAs quantum dots grown on GaAs substrate by MBE
作者： Syrine Naceur , Mohsen Choubani , Badreddine Smiri , Hassen Maaref , Guillaume Monier
DOI: 10.1016/J.VACUUM.2019.109097
关键词: X-ray photoelectron spectroscopy 、 Substrate (electronics) 、 Quantum dot 、 Optoelectronics 、 Exciton 、 Nitriding 、 Spectral line 、 Photoluminescence 、 Materials science 、 Wavelength
摘要: Abstract InAs/GaAs quantum dots (QDs) under their exposure to a nitrogen plasma were investigated using photoluminescence (PL) and X-Ray Photoelectron Spectroscopy (XPS) techniques. The motivation of this work is study the effect in InAs QDs, role amelioration optical properties. At low temperature, addition causes red-shift PL emission. This can be explained by reduction confinement. Power-dependent analysis exhibit that transition about band-to-band intrinsic recombination which may due formation lnAsN thin layer at interface QDs. XPS used determine species created surface. To follow QDs nitridation, we focused our attention on N1s In3d spectra. temperature dependent measurements range 10–300 K for nitrided showed an S-shape peak energy contributed estimated value exciton localization energy. In addition, increasing time nitridation emission wavelength increases further. Our results displayed significant improvement crystalline quality enhancement properties grown after nitridation.
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