Resistance switching devices based on amorphous insulator-metal thin films

摘要: Nanometallic devices based on amorphous insulator-metal thin films are developed to provide a novel non-volatile resistance-switching random-access memory (RRAM). In these devices, data recording is controlled by bipolar voltage, which tunes electron localization length, thus resistivity, through trapping/detrapping. The low-resistance state metallic while the high-resistance an insulating state, as established conductivity studies from 2K 300K. material exemplified Si3N4 film with randomly dispersed Pt or Cr. It has been extended other materials, spanning large library of oxide and nitride insulator films, transition main-group metal atoms. RRAMs have superior properties that set them apart RRAMs. critical switching voltage independent thickness/device area/temperature/switching speed. Trapped electrons relaxed electron-phonon interaction, adding stability enables long-term retention. As interaction mechanically altered, trapped can be destabilized, sub-picosecond demonstrated using electromagnetically generated stress pulse. AC impedance spectroscopy confirms resistance spatially uniform, providing capacitance linearly scales area inversely thickness. spatial uniformity also manifested in outstanding properties. Device degradation, due moisture, electrode oxidation dielectrophoresis, minimal when dense used hermetic seal provided. potential for low power operation, multi-bit storage complementary stacking various RRAM configurations.