作者: Dion Song , Wonjoon Jung , Mark William Covington , Dimitar Velikov Dimitrov , Qing He
DOI:
关键词: Layer (electronics) 、 Chemistry 、 Optoelectronics 、 Stack (abstract data type) 、 Head (vessel) 、 Antiferromagnetism 、 Lamination 、 Ferromagnetism 、 Atomic force microscopy 、 Electrical engineering
摘要: A magnetic element capable of detecting changes in states, such as for use a read sensor data transducing head or solid-state non-volatile memory element. In accordance with various embodiments, the includes magnetically responsive stack lamination first areal extent. The spacer layer positioned between and second ferromagnetic free layers. At least one antiferromagnetic (AFM) tab is connected to on surface thereof opposite layer, AFM having extent that less than