Integrated direct dielectric and metal deposition

摘要: Efficient integrated sequential deposition of alternating layers dielectric and conductor, for example oxide/metal or metal nitride, e.g., SiO 2 /TiN, in a single tool, even process chamber enhances throughput without compromising quality when directly depositing OMOM stack with many layers. Conductor film at least 20 conductor/dielectric pairs the same processing tool chamber, breaking vacuum between depositions, such that there is no substantial cross-contamination conductor can be achieved.