Removal chemistry for selectively etching metal hard mask
作者： Vijayakumar SubramanyaRao RamachandraRao , Kanwal Jit Singh
DOI:
关键词: Hydroxide 、 Etching (microfabrication) 、 Materials science 、 Aqueous solution 、 Hard mask 、 Hydrogen peroxide 、 Corrosion inhibitor 、 Metal 、 Layer (electronics) 、 Inorganic chemistry
摘要: Embodiments of the present invention describe a removal chemistry for removing hard mask. The is wet-etch solution that removes metal mask formed on dielectric layer, and highly selective to conductor layer underneath layer. comprises an aqueous hydrogen peroxide (H 2 O ), hydroxide source, corrosion inhibitor. source have capability remove while inhibitor prevents from chemically reacting with during removal.
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