DIRECT TWO-DIMENSIONAL ELECTRICAL MEASUREMENT USING POINT PROBING FOR DOPING AREA IDENTIFICATION OF NANODEVICE IN TEM
作者： SEONGYONG PARK , MOON J. KIM , OLEG LOURIE
DOI: 10.1142/S1793292010001810
关键词: Doping 、 Transistor 、 Optoelectronics 、 Point (geometry) 、 Substrate (electronics) 、 p–n junction 、 Dopant 、 Gate length 、 Analytical chemistry 、 Materials science 、 Nanodevice
摘要: A novel approach in two-dimensional point probe electrical measurement TEM is proposed to identify properties at specific positions. This calls for a sharp W be driven by piezo-motors order make contact with samples and then proceeding I–V measurements are taken scanned constant bias. The doping type p–n junction interface can identified rectifying data obtained. By applying this method transistor device 200 nm gate length, we could qualitatively distinguish the area from substrate. Mapping results scanning revealed presence of dopant spreading region 60 wide interface.
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