Electrical properties of polycrystalline In-doped CdS thin films
作者： E Bertran , J L Morenza , J Esteve , J M Codina
DOI: 10.1088/0022-3727/17/8/021
关键词: Electron mobility 、 Silicon 、 Electrical resistivity and conductivity 、 Doping 、 Thin film 、 Materials science 、 Conductivity 、 Analytical chemistry 、 Polycrystalline silicon 、 Evaporation (deposition)
摘要: Polycrystalline In-doped CdS thin films have been deposited at 160, 220 and 250 degrees C by simultaneous evaporation of In from two crucibles. Films with concentrations, NIn, in the 1017-1021 cm-3 range characterised Hall measurements. The conductivity, mobility carrier concentration dependences on are reported. For lower conductivity is essentially determined deposition temperature. At NIn=8*1018 presents a minimum, which caused minimum mobility. rise not sufficient to compensate decrease mobility, contrary behaviour polycrystalline silicon, where no appears.
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