Investigation on High-κ Dielectric for Low Leakage AlGaN/GaN MIS-HEMT Device, Using Material Selection Methodologies
作者： Baikadi Pranay Kumar Reddy , Karri Babu Ravi Teja , Kavindra Kandpal , None
DOI: 10.1134/S1063782618040073
关键词: Materials science 、 Optoelectronics 、 Dielectric 、 Gate dielectric 、 High-electron-mobility transistor 、 Aluminium gallium nitride 、 Gallium nitride 、 Transistor 、 Band gap 、 Electron mobility
摘要: This paper analyzes various high-κ dielectrics for low leakage AlGaN (Aluminium Gallium Nitride)/GaN (Gallium Nitride) MIS-HEMT (Metal Insulator Semiconductor—High Electron Mobility Transistor) device. The investigation is carried out by examining different attributes such as the dielectric constant, conduction band offset, and energy gap of which are crucial a good dielectric-AlGaN interface. work also computes values offsets to analytically. selection most promising done using three multi-criteria decision making methods (MCDM) namely Ashby, VIKOR (VIseKriterijumska Optimizacija I Kompromisno Resenje in Serbian, meaning Multicriteria Optimization Compromise Solution) TOPSIS (Technique Order Preference Similarity Ideal Solution). All analyses point La2O3 best gate AlGaN/GaN
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