A route to low temperature growth of single crystal GaN on sapphire
作者： Pouyan Motamedi , Neda Dalili , Kenneth Cadien
DOI: 10.1039/C5TC01556A
关键词: Optics 、 Band gap 、 Saturation velocity 、 Single crystal 、 Atomic layer deposition 、 Sapphire 、 Gallium nitride 、 Materials science 、 Electron mobility 、 Epitaxy 、 Optoelectronics
摘要: Gallium nitride (GaN) was deposited on sapphire at 275 °C, using plasma-enhanced atomic layer deposition. The films are single-crystal for the first ∼5 nm, before they transition to a polycrystalline structure. These structural shifts are reflected in the variations of the refractive index.
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sci-hub.se 参考文章(77)
Oh Hyun Kim, Dojun Kim, Tim Anderson, Atomic layer deposition of GaN using GaCl3 and NH3 Journal of Vacuum Science and Technology. ,vol. 27, pp. 923- 928 ,(2009) , 10.1116/1.3106619
S. V. Gaponenko, Optical properties of semiconductor nanocrystals ,(1998)
M. Losurdo, P. Capezzuto, G. Bruno, Plasma cleaning and nitridation of sapphire (α-Al2O3) surfaces: New evidence from in situ real time ellipsometry Journal of Applied Physics. ,vol. 88, pp. 2138- 2145 ,(2000) , 10.1063/1.1305926
Mario Birkholz, Thin Film Analysis by X-Ray Scattering ,(2005)
E. Chason, T. M. Mayer, Thin film and surface characterization by specular X-ray reflectivity Critical Reviews in Solid State and Materials Sciences. ,vol. 22, pp. 1- 67 ,(1997) , 10.1080/10408439708241258
Takayoshi Katase, Kenji Nomura, Hiromichi Ohta, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono, Large domain growth of GaN epitaxial films on lattice-matched buffer layer ScAlMgO4 Materials Science and Engineering B-advanced Functional Solid-state Materials. ,vol. 161, pp. 66- 70 ,(2009) , 10.1016/J.MSEB.2009.02.003
E. C. Knox-Davies, J. M. Shannon, S. R. P. Silva, The properties and deposition process of GaN films grown by reactive sputtering at low temperatures Journal of Applied Physics. ,vol. 99, pp. 073503- ,(2006) , 10.1063/1.2186380
D. G. Zhao, S. J. Xu, M. H. Xie, S. Y. Tong, Hui Yang, Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire Applied Physics Letters. ,vol. 83, pp. 677- 679 ,(2003) , 10.1063/1.1592306
F. Widmann, G. Feuillet, B. Daudin, J. L. Rouvière, Low temperature sapphire nitridation: A clue to optimize GaN layers grown by molecular beam epitaxy Journal of Applied Physics. ,vol. 85, pp. 1550- 1555 ,(1999) , 10.1063/1.369286
Cagla Ozgit, Inci Donmez, Mustafa Alevli, Necmi Biyikli, Atomic layer deposition of GaN at low temperatures Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. ,vol. 30, pp. 01A124- ,(2012) , 10.1116/1.3664102