Effects of Nd in Nd x In 1- x O 3 Semiconductors for Thin-Film Transistors
作者： Linfeng Lan , Wei Song , Zhenguo Lin , Peng Xiao , Lei Wang
关键词: Thermal stability 、 Acceptor 、 Semiconductor 、 Annealing (metallurgy) 、 Non-blocking I/O 、 Indium 、 Analytical chemistry 、 Coordination number 、 Electrical engineering 、 Materials science 、 Thin-film transistor
摘要: Thin-film transistors (TFTs) with neodymium-substituted indium oxide [Nd x In1- O3 (NIO)] semiconductor were fabricated. It was found that NIO films higher annealing temperature have film quality and mobility; Nd concentration coordination number of In, indicating fewer oxygen vacancies lower free carrier density. TFTs different exhibited good electrical stability under positive gate-bias stress, but the ones (5%) displayed much poorer negative stress (NBS) compared those (15% 25%). Detailed studies showed charge transfer satellite electron configuration $\vert $ $3{\rm d}_{5/2}^{5} 4f^{4}\text{O}2p^{-1}\rangle , which originates from $\textrm {O}2p \to \textrm {Nd}4f$ process, main reason for poor NBS 5% Nd, because it favored a $4f^{n+l}/4f^{n}$ couple formation, resulting in formation donor/acceptor states, will affect stability.
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