Upconversion emission study in Tm3+ and Ho3+ doped Gd2(MoO4)3 phosphor
作者： Anita Kumari , Abhishek Kumar Soni , Vineet Kumar Rai
DOI: 10.1063/1.5032370
关键词: Laser diode 、 Diffraction 、 Doping 、 Crystal structure 、 Photon upconversion 、 Radiation 、 Optoelectronics 、 Materials science 、 Ion 、 Phosphor
摘要: Upconversion luminescence properties in Tm3+ and Ho3+ ions doped Gd2(MoO4)3 phosphors have been studied by using 980 nm laser diode radiation. prepared chemical co-precipitation technique. The crystal structure identification of the has confirmed via X-ray diffraction analysis. Intense blue upconversion emission peak at 478 nm corresponding to 1G4→3H6 transition obtained phosphor. Whereas, phosphor 490 nm 5F3→5I8 obtained. colour co-ordinate analysis that both (Tm3+ Ho3+) can be used making emitting devices.
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