Structural properties of ZnSxSe1−x thin films on GaAs (1 1 0) substrate
作者： G. N. Chadhari , S. N. Sardesai , S. D. Sathaye , V. J. Rao
DOI: 10.1007/BF01166000
关键词: Crystallite 、 Thin film 、 Materials science 、 Analytical chemistry 、 Crystallography 、 Amorphous solid 、 Reflection high-energy electron diffraction 、 Electron diffraction 、 Electron backscatter diffraction 、 Transmission electron microscopy 、 Diffraction
摘要: Deposition and structural characterization of lattice-matched ZnS x Se1−x (x=0.056) films on GaAs (1 1 0) glass substrates by a new chemical growth technique have been investigated transmission electron microscopy X-ray diffraction, including low-angle at different temperatures. Electron diffraction examination has revealed that exhibit an amorphous nature when deposited room temperature, 90 °C the are polycrystalline with large grain size. morphology showed crystallite size increased increasing solvent temperature. The data from fluorescence confirm enhancement sulphur content interface also establish composition.
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