Analysis of ultrathin SiO2 interface layers in chemical vapor deposition of Al2O3 on Si by in situ scanning transmission electron microscopy

摘要: The development of Al2O3 as an alternative gate dielectric for microelectronic applications depends on the ability to grow a high-quality nanoscale thin film that forms atomically abrupt interface with Si. Here, combination in situ Z-contrast imaging, electron energy loss spectroscopy and x-ray photoelectron amorphous films grown by metalorganic chemical vapor deposition shows excess oxygen incorporated into routinely reacts Si substrate form SiO2 layer during postdeposition annealing. intrinsic oxygen-rich environment all such techniques necessity processing device implies control optimization layers could be utmost interest high-κ stacked structures.