New investigation of electronic properties of BGaAs/GaAs single quantum well for photonic applications
作者： Tarek Hidouri , Samia Nasr , Faouzi Saidi
DOI: 10.1016/J.IJLEO.2020.164253
关键词: Photonics 、 Band gap 、 Photoluminescence 、 Spectroscopy 、 Molecular electronic transition 、 Optoelectronics 、 Quantum well 、 Diffraction 、 Surface photovoltage 、 Materials science
摘要: Abstract Electronic transition in BGaAs/GaAs single quantum well (SQW) have been performed combining the dimensional Schrodinger equation, band anticroissing BAC and 10-band k.p models. The modelling results validated experimentally by photoluminescence (PL), high resolution-X-ray diffraction (HRXRD) photoreflectance (PR). calculated appeared to be consistent with experiments. Surface photovoltage SPV spectroscopy gives a new way study bandgap of boron based-SQW for first time. New e1-lh1 which is specific SQW. suggested structure looks promising candidate solar cells photonic applications as reference growth optimization understanding electronic properties related B(In)GaAs/GaAs quaternary alloys.
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