Electronic structure of a superconducting topological insulator Sr-doped Bi2Se3

摘要: Using high-resolution angle-resolved photoemission spectroscopy and scanning tunneling microscopy/spectroscopy, the atomic low energy electronic structure of Sr-doped superconducting topological insulators (SrxBi2Se3) was studied. Scanning microscopy shows that most Sr atoms are not in van der Waals gap. After doping, Fermi level found to move further upwards when compared with parent compound Bi2Se3, which is consistent carrier density this system. The surface state clearly observed, position Dirac point determined all doped samples. well separated from bulk conduction bands momentum space. persistence combined small makes material a very promising candidate for time reversal invariant superconductor