Observations Concerning Radiative Efficiency and Deep‐Level Luminescence in n‐Type GaAs Prepared by Liquid‐Phase Epitaxy
作者： H. Kressel , F. Z. Hawrylo , M. S. Abrahams , C. J. Buiocchi
DOI: 10.1063/1.1655934
关键词: Microscopy 、 Band gap 、 Luminescence 、 Dopant 、 Doping 、 Epitaxy 、 Photoluminescence 、 Materials science 、 Solid solution 、 Analytical chemistry
摘要: A study was made of n‐type GaAs prepared by liquid‐phase epitaxy doped with Si, Ge, Sn, Te, and Se photoluminescence Te‐doped material transmission‐electron microscopy. broad emission band centered at 1.2 eV (band B) is observed in LPE materials group VI elements. Band B increases intensity relative to the bandgap radiation increasing dopant concentration 1018 cm−3 range. It suggested that recombination centers responsible for are neutral (VGa+3 Te) complexes postulated Vieland Kudman, these represent solid solution Ga2Te3 GaAs. With content, solubility limit eventually exceeded, precipitates this compound then formed. These have been identified The radiative efficiency falls off sharply content beyond 2–3×1018 Te. fall partly due nonradiative rec...
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