Preparation of ultra-shallow semiconductor junctions using intermediate temperature ramp rates and solid interfaces for defect engineering
作者： Edmund G. Seebauer
DOI:
关键词: Intermediate temperature 、 Electronic engineering 、 Dopant 、 Defect engineering 、 Materials science 、 Annealing (metallurgy) 、 Optoelectronics 、 Surface processing 、 Semiconductor
摘要: Described herein are processing conditions, techniques, and methods for preparation of ultra-shallow semiconductor junctions. Methods described utilize surface or modification to limit the extent dopant diffusion under annealing conditions (e.g. temperature ramp rates between 100 5000° C./second) previously thought impractical Also techniques junctions utilizing presence a solid interface control activation.
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