Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
作者： Rainer Waser , Regina Dittmann , Georgi Staikov , Kristof Szot
关键词: Programmable metallization cell 、 Nanotechnology 、 Resistive switching 、 Conductive filament 、 Resistive switching memory 、 Materials science 、 Resistive random-access memory 、 Redox
摘要: … This review will cover particularly interesting classes of … consistent pictures painted in this review many details and many … of a VCM type resistive switching oxide, we will present it as a …
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