Magnetoelectric effect of epitaxial Cr2O3 thin films with a conducting underlayer electrode

摘要: Magnetoelectric antiferromagnetic Cr2O3 is a promising candidate for spintronic applications to achieve electrical manipulation of the magnetic property, with benefits energy efficiency and robustness external disturbances. Recently it has been demonstrated that underlayer electrode, required bias application, plays key role in determining magnetoelectric property film. Here, first time, we epitaxially grow thin films on conducting Nb:SrTiO3 substrate, which also used as bottom electrode. To demonstrate effect, perpendicular magnetized (Co/Ni)n multilayer grown an optimized Pt spacer layer. With designed structure, successfully switching field cooling processes via anomalous Hall effect measurement.